Sabtu, 14 April 2012

Sansui AU-9500 Japan Domestic Market (SOLD)








Sansui AU-9500
Integrated amplifier
Daya : 2 x 85Watts @8ohm
Kondisi masih bagus dan normal
Menggunakan 8 bh transistor output merk Motorola
Japan Domestic Market sehingga menggunakan voltage 100Volt
Salah satu amplifier Sansui dengan daya cukup besar
Harga : SOLD to Jkt
083876467899

Spec:
Rating of a mode
Form Integrated Amplifier
Output power Music power (IHF): 260W (4ohm, 1kHz)
Effective output (one-side-channel operation): 85W/85W (8ohm, 1kHz)
Effective output (both channel operation): 80W+80W (8 ohm, 1kHz)
Succession effective output (both channel operation, the rated distortion of 8 ohm, 20Hz - 20kHz): 75W+75W
THD (Output power) 0.1% or less
Cross modulation distortion 0.1% or less (an Output power, 70Hz:7kHz=4:1, SMPTE)
Power Band Width (IHF) 5Hz - 40kHz
Frequency characteristic 3Hz - 80kHz, and +0 -1 dB (at the time of main-amplifier and 1W output)
Dumping factor 50 (8ohm)
Input sensitivity/input impedance
(1kHz)
Phono1:2.5mV/50kohm
Phono2:2.5mV/30kohm, 50kohm, 100kohm
[maximum permissible input 300mV, THD 0.5%or less]
MIC: 2.5mV / 50kohm
Tuner, AUX(level adjustment is possible):100mV /, 50kohm
Tape Monitor1, 2 (PIN) (level adjustment is possible):100mV / 50kohm
2 (DIN):100mV of Tape Monitor / 50kohm
4ch, N.R.Adaptor:100mV /, 50kohm
An Output voltage/Output load impedance Tape Rec1, 2 (PIN):100mV / 1.5kohm
2 (DIN):30mV of Tape Rec / 70kohm
4ch, N.R.Adaptor:100mV /, 1.5kohm
Preamplifier (Output power): 0.8V/1.5kohm
[maximum output and THD 0.5%or less] :4.5V
Crosstalk (Output power 1kHz) Phono1, 2:50dB or more
A hum and a noise (IHF) Phono1, 2:75dB or more
Tuner, AUX: 85dB or more
Main amplifier: 100dB or more
Tone control Bass(Defeat, 150Hz, 300Hz, 600Hz): ±15dB (20Hz), a 3dB step
Midrange(Defeat, 750Hz, 1.5kHz, 3kHz): ±5dB (1.5kHz), a 1dB step
Treble(Defeat, 6kHz, 3.5kHz, 2kHz): ±15dB (20kHz), a 3dB step
Loudness (volume-30dB) 50Hz:+10dB
10kHz:+8dB
A low filter 25Hz, 50Hz:-3dB (12 dB/oct)
A high filter 12kHz, 6kHz:-3dB (12 dB/oct)
The semiconductor used Transistor: 58
FET:2
Diode: 37
Power dissipation 205W (a maximum of 550 VA)
Dimensions Width 500x height 140x depth of 347mm
Weight 23.3kg 




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